实用文章网

    • 当前位置首页 > 百科> 正文

    周鹏(复旦大学微电子学院教授)

    2019-05-31 22:38:36 百科
    周鹏(复旦大学微电子学院教授)

    周鹏(复旦大学微电子学院教授)

    周 鹏，男，博士，现为复旦大学微电子学院教授，博士生导师，微电子学院先进电子器件研究所副所长。上海市科技启明星，2016年国家自然科学基金优秀青年获得者，上海市曙光学者，科技部中青年领军人才，第四批国家“万人计画”科技创新领军人才。

    基本介绍

    • 中文名：周鹏
    • 职业：教授
    • 毕业院校：复旦大学
    • 性别：男

    个人简介

    周鹏教授，博士生导师。先后获得复旦大学 “卓学计画”人才支持，上海市青年科技启明星、国家自然基金委优秀青年资助。微电子学院先进电子器件研究所副所长，主持“上海市微纳器件与工艺专业技术服务平台”工作。于2000年、2005年分别获复旦大学物理学学士和博士学位。2006-2007年在首尔国立大学Inter-大学半导体高级研究中心任访问学者。主持了国家重大专项子课题、自然科学基金、上海市教委科技创新重点项目、973子课题等12项国家部委科研项目。 出版中英文5本着作章节，在Nature Nano，Advanced Materials，Nano Lett，Advanced Functional Materials，2D Materials, ACS Nano，Carbon, Applied Physics Letters, Small, IEEE Electron Device Letters等发表第一作者及通信作者论文50余篇。其中2007年发表在Applied Physics Letters的研究工作已被SCI他引141次。获得授权中国发明专利6项。所培养学生攻读学位期间获得了国家奖学金、企业奖学金及各类一等奖学金，毕业后进入华为、展讯、AMD及SMIC等国际影响力企业。

    学习经历

    1996.9--2000.6，复旦大学物理学系，获学士学位
    2000.9--2005.6，复旦大学信息科学与工程学院，获博士学位
    2006.9--2007.8，韩国首尔国立大学Inter-University半导体研究中心，访问学者

    科研经历

    国家自然科学基金项目，基于过渡金属氧化物薄膜的新型电阻式存储的可靠开关机理及器件製备技术研究
    国家自然科学基金项目，碳基电路中的纳米尺度阻式存储稳定实现及物理机制
    上海市教育委员会科技创新重点项目，高迁移率石墨烯/栅叠层製备及物理特性研究
    国家“极大规模积体电路製造技术及成套工艺”重大专项项目，石墨烯电子器件与集成技术研究

    出版着作

    1. 周 鹏，《半导体存储器概论》，北京邮电大学出版社，ISBN:978-7-5635-3658-0,2013，345千字。
    2. Peng Zhou, Lin Chen，Hangbing Lv，Haijun Wan，Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nano-Semiconductors Device and Technology’，Taylor & Francis Group， ISBN:978-1-4398-4835-7，2011，20千字。本书已被科学出版社引进翻译出版。
    3. Peng Zhou, Lin Chen，Hangbing Lv，Haijun Wan，Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nanoscale Semiconductor Memories: Technology and Applications’，Taylor & Francis Group，ISBN: 978-1-4665-6060-4，2013，20千字。

    发表论文

    代表性论文：
    Zhou Peng, Chen Lin，Lv Hangbing，Wan Haijun，Sun Qingqing, Chapter‘Nonvolatile Memory Device: Resistive Random Access Memory’in Book‘Nano-Semiconductors Device and Technology’，Taylor & Francis Group，ISBN：2011.
    第一作者和通信作者论文：
    1. Chunsen Liu, Xiao Yan, Xiongfei Song, Shijin Ding, David Wei Zhang andPeng Zhou*，A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications，Nature Nanotechnology, Apr.9，2018. （第一作者&通讯作者）
    2. Huawei Chen, Yantao Chen, Heng Zhang, David Wei Zhang, Peng Zhou,* and Jia Huang， Suspended SnS2 layers by light assistance for ultrasensitive ammonia detection at room temperature，Advanced Functional Materials, 2018,1801035 （通讯作者）
    3. Xiao Yan, David Wei Zhang，Chunsen Liu, Wenzhong Bao, Shuiyuan Wang, Shijin Ding Gengfeng Zheng and Peng Zhou* , High performance amplifier element realization via MoS2/GaTe heterostructures, (Advanced Science, 1700830, 2018). (通信作者)
    4. Huawei Chen, Jingyu Li, Xiaozhang Chen, David Wei Zhang and Peng Zhou*, Dramatic switching behavior in suspended MoS2 field-effect transistors, (Semiconductor science and technology, 33,024001,2018). (通信作者)
    5. Chao Li, Xiao Yan, Wenzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructure in MoS2 transistors, (Applied Physics Letters 111, 193502, 2017) (通信作者)
    6. Chao Li, Xiao Yan, Xiongfei Song, Wenzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different alignment（Nanotechnology,28,415201, 2017)
    7. Xiongfei Song, Zhongxun Guo, Qiaochu Zhang, Peng Zhou*, Wengzhong Bao* and David Wei Zhang, Progress of large-scale synthesis and electronic device application of two-dimensional transition metal dichalcogenides, (Small, 1700098, 2017). (通信作者，邀请综述)
    8. Xiao Yan, Chunsen Liu, Chao Li, Wengzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, Tunable SnSe2/Wse2 heterostructure tunneling field effect transitor, (Small, 1701478, 2017). (通信作者)
    9. Ziwen Wang, Zhongying Xue, Miao Zhang, Yongqiang Wang, Xiaoming Xie, Paul K.Chu, Peng Zhou* Zengfeng Di*, and Xi Wang, Germanium-assisted direct growth of graphene on arbitrary dielectric substrates for heating devices, (Small, 1700929, 2017). (通信作者)
    10. Chunsen Liu, Xiao Yan, Enze Zhang, Xiongfei Song, Qingqing Sun, Shijin Ding, Wengzhong Bao, Faxian Xiu*, Peng Zhou* and David Wei Zhang, Various and tunable transport properties of WSe2 transistor formed by metal contacts, (Small, 1604128, 2017). (通信作者)
    11. Chunsen Liu, Xiao Yan, Jianlu Wang*, Shijin Ding, Peng Zhou* and David Wei Zhang*, Eliminating over-erase behavior by designing energy band in high speed charge-trap memory based on WSe2, (Small, 1604128, 2017). (通信作者)
    12. Yawei Dai, Wenzhong Bao, Linfeng Hu, Chunsen Liu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou* and David Wei Zhang, Forming free and ultralow power erase operation in atomically crystal TiO2 resistive switching, (2D Materials, 4, 2017) doi.org/10.1088/2053-1583. (通信作者)
    13. E. Zhang, P. Wang, Z. Li, H. Wang, C. Song, C. Huang, Z.G. Chen, L. Yang, K. Zhang, S. Lu, W.Y. Wang, S. Liu, H. Fang, X. Zhou, H. Yan, J. Zou, X.G. Wan, P. Zhou*, W. Hu, and F.X. Xiu, Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets (ACS Nano, 10, 8067 -8077,2016). (通信作者)
    14. Peng Zhou*, Xiongfei Song, Xiao Yan, Chunsen Liu，Lin Chen, Qingqing Sun, and David Wei Zhang, Controlling the work function of molybdenum disulfide by in situ metal deposition（Nanotechnology,27,344002, 2016)
    15. X. Yuan, L.Tang, S.S. Liu, P. Wang, Z.G. Chen, C. Zhang, Y. W. Liu, J. Zou, Peng Zhou*，W. Hu, F.X. Xiu，Arrayed van der Waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy，(Nano Letters，2015，15（5）：3571-3577). (通信作者)（ESI 高引）
    16. E. Zhang, Y. Jin, X. Yuan, W.Y. Wang, C. Zhang, L. Tang, S.S. Liu, Peng Zhou*，W. Hu, F.X. Xiu，ReS2-based field-effect transistors and photodetectors， (Advanced Functional Materials，25（26）：4076-4082,2015). (通信作者)
    17. Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou,* and Faxian Xiu, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano,9,612-619 ,2015）. (通信作者)
    18. Peng Zhou*, Songbo Yang, Qingqing Sun, Lin Chen, Pengfei Wang, Shijin Ding & David Wei Zhang, Direct deposition of uniform high-k dielectrics on graphene,（Scientific Reports ,4(6448),2014). (通信作者)
    19. Songbo Yang, Peng Zhou,* Lin Chen, Qingqing Sun, Pengfei Wang, Shijin Ding, Anquan Jiang and David Wei Zhang, Direct observation of the work function evolution of graphene-two-dimensional metal contacts, （Journal of Materials Chemistry C , 2,8042—8046,2014）. (通信作者)
    20. Yan Shen, Songbo Yang , Peng Zhou*, Qingqing Sun, Pengfei Wang, Li Wan，Jing Li, Liangyao Chen, Xianbao Wang, Shijin Ding, David Wei Zhang， Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level,(Carbon，62，157-164,2013）. (通信作者)
    21. Peng Zhou, Hong-Qiang Wei, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, The tunable electrical properties of graphene nano-bridges, （Journal of Materials Chemistry C , 2,2548-2552,2013）. (通信作者)
    22. Peng Zhou, Li Ye, Qing-Qing Sun, Peng-Fei Wang, An-Quan Jiang, Shi-Jin Ding, David Wei Zhang, Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition ,（Nanoscale Research Letters ,8, (2013), 91(1-5)
    23. Peng Zhou, Li Ye, Qing-Qing Sun, Lin Chen, Shi-Jin Ding, An-Quan Jiang, David Wei Zhang, The temperature dependence in nano-resistive switching of HfAlO （IEEE Transactions on Nanotechnology, 11, 1059, 2012)
    24. Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding,and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories（Applied Physics Letters, 100, 063509, 2012) (通信作者)
    25. Shen Y, Zhou P*, Sun Q. Q, Wan L., Li J., Chen L. Y., Zhang D. Wand Wang X.B, Optical investigation of reduced graphene oxide by spectroscopic ellipsometry and the band-gap tuning （Applied Physics Letters, 99, 141911, 2011) (通信作者)
    26. Sun Q.Q , Gu J. J, Chen L, Zhou P*, Wang P. F, Ding S.J, and Zhang D.W, Controllable filament with electric field engineering for resistive switching Uniformity (IEEE Electron Device Letters. 32，1167-1169, 2011) (通信作者)
    27. Wan H. J, Zhou P*, Ye L, Lin Y. Y, Tang T. A, Wu H. M, and Chi M. H, In situ observation of compliance-current overshoot and its effect on resistive switching (IEEE Electron Device Letters. 31, 246-248, 2010) (通信作者)
    28. Zhou P, Li J ,Chen L.Y , Gao C , Lin Y , Tang T.A, Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application (Thin Solid Films 518,5652-5655,2010)
    29. Zhou P ,Yin M, Wan H J，Lv H. B, Tang T. A and Lin Y. Y, Role of TaON interface for CuxO resistive switching memory based on a combined model(Applied Physics Letters, 94, 053510, 2009)
    30. Chen Y. R, Zhou P*, Li J and Chen L. Y, Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry, （Journal of Vacuum Science &Technology B, 27,1030-1034, 2009）(通信作者)
    31. Yin M, Zhou P*, Lv H. B, Xu J, Song Y. L, Fu X. F, Tang T. A, Chen B. A and Lin Y. Y, Improvement of resistive switching in CuxO using new RESET mode (IEEE Electron Device Letters. 29, 681-683, 2008) (通信作者)
    32. Zhou P, Lv H. B, Yin M., Tang L, Song Y. L, Tang T. A, Lin Y. Y, Bao A, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi，Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application （Journal of Vacuum Science & Technology B, 26,1030-1033, 2008）
    33. Lv Hang-Bing, Zhou Peng*, Fu Xiu-Feng, Yin Ming, Song Ya-Li,Tang Li, Tang Ting-Ao, Lin Yin-Yin, Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications (Chin. Phys. Lett. 25, 1087-1090, 2008) (通信作者)
    34. Wu X, Zhou P*, Li J, Chen L.Y, Lv H.B, Lin Y.Y, Tang T.A, Reproducible unipolar resistance switching in stoichiometric ZrO2 films (Applied Physics Letters ,90 (18): 183507, 2007) (通信作者)
    35. Zhou P, Shin Y. C, Choi B. J, Choi S, Hwang C. S, Lin Y. Y, Lv H. B, Yan X. J, Tang T. A, Chen L. Y, and Chen B. M, Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe (Electrochemical and Solid-State Letters, 10, H281-H283, 2007)
    36. Zhou P, You G. J, Li J, Wang S.Y, Qian S.X, Chen L.Y, Annealing effect of linear and nonlinear optical properties of Ag:Bi2O3 nanocomposite films, (Optics Express,13(5), 1508-1514, 2005)
    37. Zhou P, You G.J, Li Y.G., Han T, Li J, Wang S.Y, Chen L.Y, Liu Y and Qian S.X，Linear and ultrafast nonlinear optical response of Ag : Bi2O3 composite films (Applied Physics Letters, 83 (19): 3876-3878, 2003)
    合作者发表论文选录：
    1. Peng-Fei Wang*, Xi Lin, Lei Liu, Qing-Qing Sun,Peng Zhou, Xiao-Yong Liu, Wei Liu,Yi Gong and David Wei Zhang, A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation，（Science, SCI,影响因子31）,341(6146),(2013),640-643.
    2. M. Wang, W. J. Luo, Y. L. Wang, L. M. Yang, W. Zhu,P. Zhou, J. H. Yang, X. G. Gong, Y. Y. Lin*, A Novel CuxSiyO Resistive Memory in Logic Technology with Excellent Data,( 2010 Symposia on VLSI Technology and Circuits, Honolulu, USA)
    3. Hangbing Lv, Ming Wang, Haijun Wan, Yali Song, Wenjing Luo,Peng Zhou, Tingao Tang, Yinyin Lin*, R.Huang, S.Song, J. G.Wu, H. M. Wu, M. H. Chi, Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode, (Applied Physics Letters, 94(21), (2009),213502(1-3)).

    科研方向

    积体电路工艺和新型二维半导体功能器件。
    具体包括原始创新石墨烯上原子层沉积技术套用，下一代非挥发存储器工作机制与大规模製造工艺，碳基电路存储器与电晶体集成技术以及MoS2，BN，NbSe2等其他二维晶体套用研究等。为中芯国际、华虹、士兰等重要积体电路製造企业研发部门提供技术谘询。

    课程教学

    本科课程：套用光伏学
    研究生课程：半导体存储材料、器件与工艺

    人物荣誉

    2019年8月2日，入选2019年度国家杰出青年科学基金建议资助项目申请人名单。
    声明：此文信息来源于网络，登载此文只为提供信息参考，并不用于任何商业目的。如有侵权，请及时联系我们：baisebaisebaise@yeah.net

    热门文章

    关于本站

    实用文章网 读后感 读书笔记 读书赏析

    联系我

  • 读书笔记
  • 实用

    • 特别鸣谢

    Copyright © 2010-2023 实用文章网 版权所有 豫ICP备2023013361号-1