周琦：男，电子科技大学副教授。博士。2012年毕业于香港科技大学获博士学位，同年加入电子科技大学微电子与固体电子学院。
专注于第三代宽禁带新型半导体材料、器件及其集成技术的研究，尤其在氮化镓（GaN）功率器件新结构、模型/器件物理、先进制备工艺与GaN功率集成技术领域具有较好的研究基础。开发出一款硅基GaN（GaN-on-Si）栅控横向功率整流器新结构，器件性能达到国际报导的同类器件最高水平。开发出一种高效、低损伤原子层刻蚀技术，利用该技术製备的增强型GaN高电子迁移率电晶体（HEMT）器件性能达到国际领先水平。研究成果发表于行业顶级期刊《IEEE Electron Device Letters》、《IEEE Trans. on Electron Devices》、《IEEE Microwave and Wireless Components Letter》及国际顶级会议IEDM、ISPSD。目前已在IEEE EDL、IEEE TED、IEEE MWCL等本领域顶级期刊和IEDM、ISPSD等国际顶级会议共发表论文43篇。研究成果被功率半导体世界最着名学者J. B. Baliga (IEEE fellow, 2010年美国国家科学技术奖获得者)发表于Semicond. Sci. and Tech.的 Invited Review Paper及中国科学院院士郝跃教授的综述性文章作为高压 InAlN/GaN HEMT的代表性工作所引用。参加国际重要学术会议15次，邀请报告1次，口头报告4次。申请中国发明专利5项。被IEEE-TED和IEEE-EDL评为2013及2014年度金牌审稿人(Golden Reviewers)。
基本介绍
- 中文名：周琦
- 国籍：中国
- 民族：汉
- 职业：教授
- 毕业院校：香港科技大学
- 学位/学历：博士
- 专业方向：新型半导体材料、器件及其集成技术
- 职务：电子科技大学副教授
- 主要成就：开发出一款硅基GaN（GaN-on-Si）栅控横向功率整流器新结构，器件性能达到国际报导的同类器件最高水平。
周琦，男，电子科技大学副教授。
教育背景
2008.08－2012.08 香港科技大学，电子与计算机工程专业，博士学位
2004.08－2007.04 西安电子科技大学，电子工程专业，硕士学位2000.09－2004.06 西安电子科技大学，电磁场与微波专业，学士学位
工作经历
2015.07-至今 电子科技大学， 副教授
2012.08-2015.06 电子科技大学， 讲师
2007.04-2008.07 摩比天线技术（深圳）有限公司，主任工程师/项目经理
代表性学术成果
★ 在被誉为“器件奥林匹克”的顶尖会议IEDM上发表论文2篇
★ 2013年在功率半导体顶级会议ISPSD实现GaN领域中国大陆发表论文0的突破
★ 2015年在功率半导体顶级会议ISPSD做大会口头报告（迄今在GaN领域是中国大陆学者唯一口头报告）
★ 2013-2016连续4年在ISPSD发表论文，投稿命中率100%。目前是在顶级会议ISPSD以第一作者及通讯作者发表
GaN相关研究论文最多的中国学者（第一作者3篇，通讯作者1篇）
★ 三项研究成果在顶级期刊 IEEE EDL所发表论文被国际知名半导体行业杂誌《Semiconductor Today》和
《Compound Semiconductor》进行整版面专题报导
科研项目
国家自然科学基金青年项目-"新型InAlN/GaN异质结功率器件新结构与模型"（NSFC61306102） 主持
国家自然科学基金面上项目-"Si基GaN增强型功率开关器件阈值电压调控机理与新结构"（NSFC61674024） 主持
国防重点实验室开放基金-"InAlN/GaN MISFET界面电荷行为和相关技术研究" 主持 （已结题）
中央高校基本科研项目-"Schottky-2DEG隧穿InAlN/GaN功率器件新结构与模型" 主持 （已结题）
国家科技重大专项-"硅基GaN功能集成与硅工艺融合技术研究" 主研
学术兼职
2013-至今 IEEE 会员
2012-至今 国际权威期刊 IEEE Electron Dev. Lett., IEEE Trans. Electron Dev., Applied Physics Lett.特邀审稿人
2013-至今 SCI期刊 Microelectronics Reliability, Solid-State Electronics, Chinese Physics Lett., Chinese Physics-B 审稿人
期刊论文：
★ Q. Zhou*, Z. H. Wang, X. Y. Zhou, A. B. Zhang, Y. Y. Shi, L. Liu, Y. G. Wang, Y. L. Fang, Y. J. Lv, Z. H. Feng, and B. Zhang, "Physics of Dynamic Threshold Voltage and Steep Subthreshold Swing in Al2O3/InAlN/GaN MOSHEMTs," Semicond. Sci. Technol., vol. 31, pp. 035005, Jan. 2016.
★Qi Zhou*, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, and Bo Zhang*,"7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering,"IEEE Electron Device Lettersvol. 37, no.2, pp.165-168, Feb. 2016.
被半导体行业国际知名杂誌 《SemiconductorToday》作为GaN功率器件重要研究进展进行专题报导。
★Yuanyuan Shi,Qi Zhou, Yang Jin, Bowen Chen, Wanjun Chen, Wei Huang and Bo Zhang,"Impact of interface traps on switching behavior of Normally-OFF AlGaN/GaN MOS-HEMTs," Physica Solidi Status-C 1–4 (2016) / DOI 10.1002/pssc.201510189
★ Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao,Xinyu Liu, Jinhan Zhang, Qi Zhou, Wanjun Chen, Bo Zhang, and Lifang Jia ." Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs"[J]. Journal of Vacuum Science & Technology B, 2016, 34(4): 041202.
★Wanjun Chen, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Qi Zhou, Zhaoji Li and Bo Zhang, "High Peak Current MOS Gate-Triggered Thyristor with Fast Turn-on Characteristics for Solid-State Closing Switch Applications,"IEEE Electron Device Lettersvol. 37, no.2, pp.205-208, Feb. 2016.
★Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang, and Xinyu Liu, "Normally OFF GaN-on-Si MIS-HEMTs FabricatedWith LPCVD-SiNx Passivation andHigh- Temperature Gate Recess,"IEEE Trans. on Electron Devicesvol. 63, no.2, pp.614-619, Feb. 2016.
★Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Yingkui Zheng, Yankui Li, Chao Zhao, Xinyu Liu, Qi Zhou, Wanjun Chen and Bo Zhang, "Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing," Applied Physics Lett.,vol. 107, no. 26, pp.262109, 2015
★Qi Zhou*, Li Liu, Xingye Zhou, Anbang Zhang, Yuanyuan Shi, Zeheng Wang, Yuan Gang Wang, Yulong Fang, Yuanjie Lv, Zhihong Feng and Bo Zhang, "Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection,"IETElectronics Lett.,vol. 51, no. 23, pp: 1889–1891,Nov. 2015
★Qi Zhou*, Yang Jin, Yuanyuan Shi, Jinyu Mou, Bao Xu, Bowen Chen, and Bo Zhang, "High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode with MIS-Gated Hybrid Diode,"IEEE Electron Device Lett., vol. 36, no. 7, Jul. 2015.
被国际半导体行业着名杂誌《SemiconductorToday》作为GaN功率半导体技术重要研究进展进行专题报导。
★Qi Zhou*, Bowen Chen, Yang Jin, Sen Huang, Ke Wei, Xinyu Liu, Xu Bao, Jinyu Mou, and Bo Zhang, "High- Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs with 626MW/cm2 Figure of Merit,"
IEEE Trans. on Electron Devices, vol. 62, no. 3, pp: 776-781, Mar. 2015.
★Qi Zhou*, Shu Yang, Wanjun Chen, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications,"Solid-State Electronics,vol. 91, pp: 19-23, 2014.
★Qi Zhou*,, Wanjun Chen, Shenghou Liu,Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement,"IEEE Trans. on Electron Devices, vol. 60, no. 3, pp: 1075-1081, Mar. 2013.
★Qi Zhou*,, W. Chen, C. Zhou, B. Zhang and K.J. Chen, "High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection,"IETElectronics Lett., vol. 49, no. 22, pp: 1391-1393, Oct. 2013.
★Qi Zhou*,, Wanjun Chen, Shenghou Liu,Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications," Electrochemical Society Transactions, vol. 54, no. 4, pp: 351-363, Oct. 2013.
★Qi Zhou*,, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance,"Jpn. J. Appl. Phys. vol. 51, 04DF02, Apr. 2012.
★Qi Zhou*,, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/AlN/GaN MISHEMT with Enhanced Breakdown Voltage,"IEEE Electron Device Lett., vol. 33, no. 1, pp: 19-21, Jan. 2012.
★Shu Yang, Sen Huang, Hongwei Chen, Chunhua Zhou,Qi Zhou, Michael Schnee, Qing-Tai Zhao, Jurgen Schubert,and Kevin J. Chen, "AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric,"IEEE Electron Device Lett., vol. 33, no. 7, pp: 979-981, Jul. 2012.
★Hongwei Chen, Li Yuan,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN power tunnel-junction FETs, "Phys. Status Solidi-C, vol. 9, no. 3-4, pp: 871-874, Mar. 2012.
★ Li Yuan, Hongwei Chen,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor"IEEE Electron Device Lett., vol. 32, no. 9, pp: 1221-1223, Sep. 2011.
★Qi Zhou*, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode,"IEEE Microwave and Wireless Components Lett., vol. 20, no. 5, pp: 277-279, May. 2010.
★King-Yuen Wong, Wanjun Chen,Qi Zhou, and Kevin J. Chen, "Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications,"IEEE Trans. on Electron Devices, vol. 56, no. 12, pp: 2888-2894, Dec. 2009.
★S. J. Li,Qi Zhou, Y. J. Xie, and Z. Y. Lei, "THEORETICAL AND EXPERIMENTAL INVESTIGATION ON PCB HELIX ANTENNA,"J. of Electromagnetic Waves and Applications,vol. 21, no. 7, pp. 877-887, Jul. 2007.
★Qi Zhou*, Y. J. Xie, and Z. Chen, "Prediction of Equipment-to-Equipment Coupling Through Antennas Mounted on and Aircraft,"J. of Electromagnetic Waves and Applications,vol. 21, no. 5, pp: 653-663, 2007.
国际顶级学术会议 （IEDM、ISPSD）：
★Qi Zhou*,Anbang Zhang, Ruopu Zhu, Yuanyuan Shi, Zeheng Wang, Li Liu, Bowen Chen, Yang Jin, Wanjun Chen, andBo Zhang, "Threshold Voltage Modulation by Interface Charge Engineering for High Performance Normally-off GaN MOSFETs with High Faulty Turn-on Immunity,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD),Prague, Czech Republic, June 12–16, 2016.
★Wanjun Chen*, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Hongquan Liu,Qi Zhou, Zhaoji Li, and Bo Zhang, "Experimentally Demonstration a Cathode Short MOS-Controlled Thyristor (CS-MCT) for Single or
Repetitive Pulse Applications,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD),Prague, Czech
Republic, June 12–16, 2016.
★Qi Zhou*, Yang Jin, Xu Bao, Jingyu Mou, Bowen Chen, Yijun Shi, Zhaoyang Liu, Jian Li, Wanjun Chen, and Bo Zhang, "Over 1.1 kV Breakdown Voltage, Low Turn-on Voltage GaN-on-Si Power Diode with MIS-Gated Hybrid Anode,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hong Kong, China, May, 2015. GaN领域迄今中国大陆在该顶级会议唯一大会口头报告
★Qi Zhou*, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Breakdown Voltage InAlN/GaN HEMTs Achieved by Schottky-Source Technology,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Kanazawa, Japan., pp. 195-198, May. 2013.
GaN领域中国大陆在该顶级会议第一篇论文
★Jinhan Zhang, Sen Huang,Qi Zhou*, Xinhua Wang, Ke Wei, Guoguo Liu, Yingkui Zheng, Xiaojuan Chen, Xinyu Liu, Zhongjie Yu, Wanjun Chen, and Bo Zhang, "ON-State Breakdown Mechanism of GaN Power HEMTs,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hawaii, US., pp. 362-365, Jun. 2014.
★Li Yuan, Hongwei Chen,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "A Novel Normally-off GaN Power Tunnel Junction FET,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), San Diego, US., pp. 276- 279, May. 2011.
★Qi Zhou*, Sen Huang, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio,"Int. Electon Device Meeting (IEDM), Washington, US., pp. 777-780, Dec. 2011.
★Kevin J. Chen, L. Yuan, M. J. Wang, H. Chen, S. Huang,Qi Zhou, C. Zhou, B. K. Li, and J. N. Wang, "Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology,"Int. Electon Device Meeting (IEDM), Washington, US., pp. 467-470, Dec. 2011.（Invited paper）
其他国际学术会议：
★Ruopu Zhu,Qi Zhou†, A. Zhang, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, Wanjun Chen, and Bo Zhang,"High Performance Normally-off Al2O3/GaN MOSFETs with RecordHigh Threshold Voltage by Interface Charge Engineering,"IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, Oct. 2016.
★Yi Yang,Qi Zhou†, Yuanyuan Shi, Zeheng Wang, Li Liu, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang,"0.3 VT/1.1 kV AlGaN/GaN Lateral Power Diode with MIS-GatedHybrid Anode on Silicon Substrate,"IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China,Oct. 2016
★Yuanyuan Shi,Qi Zhou*, Yang Jin, Bowen Chen, Wanjun Chen, and Bo Zhang, "Impact of interface states
on switching behavior of Normally-OFF AlGaN/GaN MIS-HEMTs,"11thIntl. Conference on
NitrideSemiconductors (ICNS), Aug. 2015
★Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu, Yijun Shi,Qi Zhou, Wanjun Chen, and Bo Zhang, "Microstructure and physical mechanism of Au-free ohmic contacts to AlGaN/GaNheterostructures annealed at 600 C,"11thIntl. Conference on Nitride Semiconductors (ICNS), Aug. 2015
★Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu,Qi Zhou, Wanjun Chen, Bo Zhang, "Study of interface traps and fixed charges between GaN(cap)/AlGaN/AlN/GaN heterostructure and SiNx gate dielectric grown by Low Pressure Chemical Vapor Deposition,"11thIntl. Conference on Nitride Semiconductors (ICNS), Aug. 2015
★ Qi Zhou*, Ling Wang, Xu Bao, Jinyu Mou, Yuanyuan Shi, Zhaoyang Liu, Wanjun Chen, and Bo Zhang, "High Performance AlGaN/GaN Power Diode with Edge-Terminated Hybrid Anode,"IEEE 12th Int. Conf. on Solid- State and Integrated Circuit Technology (ICSICT), Guilin, China, Oct. 2014.
★Qi Zhou*, W. J. Chen, S. H. Liu, B. Zhang, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN Heterojunction: Prospects for Robust GaN Power Devices,"224th Electronchemical Society Meeting, San Francisco, US., Oct. 2013. (Invited paper)
★Hongwei Chen, Li Yuan,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN Power Tunnel-Junction FETs,"9th Int. Conf. on Nitride Semiconductors (ICNS), Glasgow, Scotland, Jul. 2011.
★Qi Zhou*, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage,"Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 624-625, Sep. 2011.
★Qi Zhou*, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Observation of Trap- Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT,"Device Research Conference (DRC), Santa Barbara, US., pp. 71-72, Jun. 2011.
★Qi Zhou*, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "High-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN-Based Lateral Field-Effect Diode,"IEEE Electrical Design of AdvancedPackaging & Systems Symposium (EDAPS), HongKong, China, pp. 1-4, 2009.
★Qi Zhou*, King Yue Wong, Wanjun Chen, and Kevin J. Chen, "Microwave Detector Using AlGaN/GaN HEMT-Compatible Lateral-Field Effect Rectifier (L-FER),"Topical Workshop on HeterostructureMicroelectronics (TWHM), Nagano, Japan, Aug. 2009.
